Schottky barrier height modulation effect on n-Ge with TaN contact
Schottky barrier height modulation effect on n-Ge with TaN contact
复制标题
肖特基势垒高度调制对带有 TaN 接触的 n-Ge 的影响
DOI：
10.1016/j.mssp.2018.11.016
复制
发表时间：
2019-03-01
影响因子：
4.1
通讯作者：
Chen, Songyan
中科院分区：
文献类型：
--
作者：
Wang, Jianyuan;Huang, Wei;Chen, Songyan
形成具有各种N含量的TaN膜以提供n型Ge上的欧姆接触。用低温I-V测量方法研究了TaN/n-Ge和TaN/p-Ge接触的肖特基势垒高度（SBH）。SBH从Ta/n-Ge的0.54 eV调制到TaN/n-Ge的0.30 eV。发现在n-Ge上的SBH降低与TaNx中的N接触x成线性关系，这证实了界面偶极子层模型。在等离子体处理的Ge表面上沉积TaN表明，表面损伤不是n-Ge上低SBH的原因。相反，SBH调制效应在粗糙的Ge表面上消失，这是由于界面偶极子层的解构。
TaN film with various N contents was formed to provide ohmic contact on n-type Ge. Schottky barrier heights (SBH) of the TaN/n-Ge and TaN/p-Ge contacts were carefully investigated by low-temperature I-V measurement. The SBH was modulated from 0.54 eV for Ta/n-Ge to 0.30 eV for TaN/n-Ge. The SBH lowering on n-Ge was found to be linear with the N contact x in TaNx, which confirmed the interfacial dipoles layer model. Deposition of TaN on plasma-treated Ge surface showed that the surface damage is not the reason for the low SBH on n-Ge. On the contrary, SBH modulation effect vanished on the rough Ge surface due to deconstruction of the interfacial dipoles layer.