Electronic structure of ErAs(100)
Electronic structure of ErAs(100)
复制标题
ErAs(100)的电子结构
DOI：
10.1103/physrevb.67.035104
复制
发表时间：
2003
影响因子：
3.7
通讯作者：
C. Palmstrøm
中科院分区：
文献类型：
--
作者：
T. Komesu;H. Jeong;Jaewu Choi;C. Borca;P. Dowben;A. Petukhov;B. Schultz;C. Palmstrøm
用光电子能谱和逆光电子能谱研究了在GaAs(100)衬底上外延生长的稀土氟化铒(ERAS)的能带结构。电子结构以体能带为主，与计算的能带结构定性一致。在价带结构和至少一个表面共振带中可以识别出一些额外的非弥散的$4f$多重态能级。从对称性选择规则来看，光电子能谱提供了强有力的证据表明，${\ensureath{\Delta}}_{5}$(或e)对称带是Er和As杂化的结果，而${\susureath{\Delta}}_{1}$(或${a}_{1})$对称带可能来自Er(和/或As)的非键态或反键态。
The experimental band structure of the rare-earth pnictide erbium arsenide (ErAs), grown epitaxially on GaAs(100), has been mapped out using photoelectron spectroscopy and inverse photoemission spectroscopy. The electronic structure is dominated by bulk bands qualitatively consistent with the calculated band structure. A number of additional nondispersing $4f$ multiplet levels can be identified in the valence-band structure as well as at least one surface resonance band. From symmetry selection rules, photoemission provides strong evidence that the ${\ensuremath{\Delta}}_{5}$ (or e) symmetry bands are a consequence of hybridization between Er and As, while the ${\ensuremath{\Delta}}_{1}$ (or ${a}_{1})$ symmetry bands have possible contributions from nonbonding or antibonding states from Er (and/or As).