Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode
Voltage-controlled tunneling anisotropic magneto-resistance of a ferromagnetic $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode
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铁磁 $p^{ }$-(Ga,Mn)As/$n^{ }$-GaAs 齐纳-Esaki 二极管的电压控制隧道各向异性磁阻
DOI：
10.1063/1.2137903
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
G. Faini
中科院分区：
文献类型：
--
作者：
R. Giraud;M. Gryglas;L. Thevenard;A. Lemaître;G. Faini
在垂直磁场中，在较大的温度和电压范围内，证明了单个$p^{++}$-(Ga,Mn)As/$n^{+}$- gaas齐纳- esaki二极管具有较大的隧道各向异性磁电阻。在施加偏压的情况下，隧道结的透明度被修改，允许在隧道和欧姆区域之间连续调整各向异性输运特性。此外，各向异性隧道磁电阻的不对称偏置依赖性也被观察到：反向偏置突出了全部（Ga,Mn）As价带态的贡献，而正向偏置只探测了部分态密度，并显示了两个子带相反的贡献。
The large tunneling anisotropic magneto-resistance of a single $p^{++}$-(Ga,Mn)As/$n^{+}$-GaAs Zener-Esaki diode is evidenced in a perpendicular magnetic field over a large temperature and voltage range. Under an applied bias, the tunnel junction transparency is modified, allowing to continuously tune anisotropic transport properties between the tunneling and the ohmic regimes. Furthermore, an asymmetric bias-dependence of the anisotropic tunneling magneto-resistance is also observed: a reverse bias highlights the full (Ga,Mn)As valence band states contribution, whereas a forward bias only probes part of the density of states and reveals opposite contributions from two subbands.