Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition
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DOI：
10.1016/j.apsusc.2009.10.109
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发表时间：
2010-02
影响因子：
6.7
通讯作者：
G. Zheng;A. Yang;Hongyuan Wei;X. Liu;Huaping Song;Yan Guo;C. Jia;C. Jiao;Shao-yan Yang;Qinsheng Zhu;Zhanguo Wang
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文献类型：
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作者：
G. Zheng;A. Yang;Hongyuan Wei;X. Liu;Huaping Song;Yan Guo;C. Jia;C. Jiao;Shao-yan Yang;Qinsheng Zhu;Zhanguo Wang
采用金属有机物化学气相沉积（MOCVD）法生长ZnO薄膜，并对其进行了生长后退火处理。ZnO薄膜的晶粒尺寸随退火温度的升高而单调增大。X射线衍射（XRD）结果表明，退火后的ZnO薄膜具有c轴择优取向。傅里叶变换红外透射测试表明，低温生长的ZnO薄膜经过生长后退火后含有CO2分子。提出了一个两步反应过程来解释CO2的形成机理，指出了金属有机物化学气相沉积ZnO薄膜过程中可能的化学反应过程。
Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by X-ray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO2molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO2, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.