Surface roughness analysis of Cu films deposited on Si substrates: A molecular dynamic analysis
Surface roughness analysis of Cu films deposited on Si substrates: A molecular dynamic analysis
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沉积在硅衬底上的铜膜的表面粗糙度分析：分子动力学分析
DOI：
10.1063/1.5095139
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发表时间：
2019-07-28
影响因子：
3.2
通讯作者：
Wang, Yongkun
中科院分区：
文献类型：
--
作者：
Chen, Zhiqiang;Cao, Yunqi;Wang, Yongkun
铜具有低电阻率、高电迁移电阻和低成本等优点，是替代铝和金在集成电路和微型器件中应用的重要材料。然而，表面粗糙度会影响这些器件的接触电阻，特别是当器件处于微尺度或纳米尺度时。基于物理气相沉积机理，采用分子动力学模拟方法对Si衬底上沉积Cu膜的表面粗糙度进行了分析。详细研究了膜厚、沉积温度、沉积间隔和回流温度对Cu膜表面粗糙度的影响。仿真结果表明，适当调整这些参数可以提高表面粗糙度。这也为进一步研究在Si衬底上沉积Cu薄膜奠定了基础。铜具有低电阻率、高电迁移电阻和低成本等优点，是替代铝和金在集成电路和微型器件中应用的重要材料。然而，表面粗糙度会影响这些器件的接触电阻，特别是当器件处于微尺度或纳米尺度时。基于物理气相沉积机理，采用分子动力学模拟方法对Si衬底上沉积Cu膜的表面粗糙度进行了分析。详细研究了膜厚、沉积温度、沉积间隔和回流温度对Cu膜表面粗糙度的影响。仿真结果表明，适当调整这些参数可以提高表面粗糙度。这也为进一步研究在Si衬底上沉积Cu薄膜奠定了基础。
Cu is a promising material to replace Al and Au in integrated circuits and microscale devices because of its low electrical resistivity, high electromigration resistance, and low cost. However, surface roughness affects the contact resistance of these devices, especially when the device is on a microscale or nanoscale. This paper focuses on surface roughness analysis of Cu films deposited on Si substrates by molecular dynamic simulation based on the mechanism of physical vapor deposition. The effects of film thickness, deposition temperature, deposition interval, and reflow temperature on the surface roughness of Cu films are studied in detail. The simulation results show that the surface roughness can be improved by appropriate adjustments of these parameters. They also provide a foundation for further work on the deposition of Cu films on Si substrates.Cu is a promising material to replace Al and Au in integrated circuits and microscale devices because of its low electrical resistivity, high electromigration resistance, and low cost. However, surface roughness affects the contact resistance of these devices, especially when the device is on a microscale or nanoscale. This paper focuses on surface roughness analysis of Cu films deposited on Si substrates by molecular dynamic simulation based on the mechanism of physical vapor deposition. The effects of film thickness, deposition temperature, deposition interval, and reflow temperature on the surface roughness of Cu films are studied in detail. The simulation results show that the surface roughness can be improved by appropriate adjustments of these parameters. They also provide a foundation for further work on the deposition of Cu films on Si substrates.