Optically enhanced charge transfer between C60 and single-wall carbon nanotubes in hybrid electronic devices.
Optically enhanced charge transfer between C60 and single-wall carbon nanotubes in hybrid electronic devices.
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DOI：
10.1039/c3nr04314b
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发表时间：
2014-01
期刊：
影响因子：
6.7
通讯作者：
C. Allen;Guoquan Liu;Yabin Chen;A. Robertson;Kuang He;Kyriakos Porfyrakis;Jin Zhang;G. Briggs;J. Warner
中科院分区：
文献类型：
--
作者：
C. Allen;Guoquan Liu;Yabin Chen;A. Robertson;Kuang He;Kyriakos Porfyrakis;Jin Zhang;G. Briggs;J. Warner
在这篇文章中，我们探讨了混合C60-碳纳米管结构的组成部分之间的电子相互作用的性质。利用芳香介体，我们选择性地将C60分子连接到碳纳米管场效应晶体管器件上。通过原子力和透射电子显微镜的结构表征证实了这种连接的选择性。从碳纳米管到C60分子的电荷转移通过拉曼G（+）峰位置的蓝移和晶体管转移特性的增加的阈值电压来证明。我们估计这种电荷转移将每单位长度的空穴密度增加高达0.85 nm（-1），并证明了进一步的光学增强电荷转移，其将空穴密度增加额外的0.16 nm（-1）。
In this article we probe the nature of electronic interactions between the components of hybrid C60-carbon nanotube structures. Utilizing an aromatic mediator we selectively attach C60 molecules to carbon nanotube field-effect transistor devices. Structural characterization via atomic force and transmission electron microscopy confirm the selectivity of this attachment. Charge transfer from the carbon nanotube to the C60 molecules is evidenced by a blue shift of the Raman G(+) peak position and increased threshold voltage of the transistor transfer characteristics. We estimate this charge transfer to increase the device density of holes per unit length by up to 0.85 nm(-1) and demonstrate further optically enhanced charge transfer which increases the hole density by an additional 0.16 nm(-1).