The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates
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DOI：
10.1063/1.3682314
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发表时间：
2012-02
影响因子：
4
通讯作者：
Ting Wang;A. Lee;F. Tutu;A. Seeds;Huiyun Liu;Q. Jiang;K. Groom;R. Hogg
中科院分区：
文献类型：
--
作者：
Ting Wang;A. Lee;F. Tutu;A. Seeds;Huiyun Liu;Q. Jiang;K. Groom;R. Hogg
利用透射电子显微镜、腐蚀坑密度和光致发光（PL）测量研究了GaAs成核层生长温度对Ge衬底上单片生长的1.3 μ mInAs/GaAs量子点特性的影响。Ge基InAs/GaAs量子点的光致发光强度对初始GaAs成核温度非常敏感，在380 °C时具有最强的室温发射，这是由于在GaAs/Ge界面处产生的缺陷密度较低，并且在该温度下进入III-V层。利用透射电子显微镜、腐蚀坑密度、透射电子显微镜和透射电子显微镜研究了GaAs成核层的生长温度对Ge衬底上1.3 μ mInAs/GaAs量子点（QD）性能的影响，并对GaAs成核层的生长温度对1.3 μ mInAs/GaAs量子点（QD）性能的影响进行了分析。和光致发光（PL）测量。Ge基InAs/GaAs量子点的光致发光强度对初始GaAs成核温度非常敏感，在380 °C时具有最强的室温发射，这是由于在GaAs/Ge界面处产生的缺陷密度较低，并且在该温度下进入III-V层。此外，初始GaAs层在380 °C成核的Ge基1.3 μ mInAs/GaAs量子点二极管实现了100 °C的激光输出。
The effect of the growth temperature of the GaAs nucleation layer on the properties of 1.3-μm InAs/GaAs quantum dots (QDs) monolithically grown on a Ge substrate is investigated by using transmission electron microscopy, etch pit density, and photoluminescence (PL) measurements. The photoluminescence intensity for Ge-based InAs/GaAs quantum dots is very sensitive to the initial GaAs nucleation temperature with the strongest room-temperature emission at 380 °C, due to the lower density of defects generated at the GaAs/Ge interface and prorogating into the III-V layers at this temperature. Furthermore, lasing operation up to 100 °C was achieved for Ge-based 1.3-μm InAs/GaAs quantum-dot diodes with the initial GaAs layer nucleated at 380 °C.The effect of the growth temperature of the GaAs nucleation layer on the properties of 1.3-μm InAs/GaAs quantum dots (QDs) monolithically grown on a Ge substrate is investigated by using transmission electron microscopy, etch pit density, and photoluminescence (PL) measurements. The photoluminescence intensity for Ge-based InAs/GaAs quantum dots is very sensitive to the initial GaAs nucleation temperature with the strongest room-temperature emission at 380 °C, due to the lower density of defects generated at the GaAs/Ge interface and prorogating into the III-V layers at this temperature. Furthermore, lasing operation up to 100 °C was achieved for Ge-based 1.3-μm InAs/GaAs quantum-dot diodes with the initial GaAs layer nucleated at 380 °C.