Phase relations in silicon and germanium nitrides up to 98 GPa and 2400°C
Phase relations in silicon and germanium nitrides up to 98 GPa and 2400°C
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DOI:
10.1111/jace.16063
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发表时间:
2018-09
影响因子:
3.9
通讯作者:
N. Nishiyama;J. Langer;T. Sakai;Y. Kojima;A. Holzheid;N. A. Gaida;E. Kulik;N. Hirao;S. Kawaguchi;T. Irifune;Y. Ohishi
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作者:
N. Nishiyama;J. Langer;T. Sakai;Y. Kojima;A. Holzheid;N. A. Gaida;E. Kulik;N. Hirao;S. Kawaguchi;T. Irifune;Y. Ohishi
Phase relations in silicon and germanium nitrides (Si3N4and Ge3N4) were investigated using a Kawai‐type multianvil apparatus and a laser‐heated diamond anvil cell combined with a synchrotron radiation. The pressure‐induced phase transition from the β to γ (cubic spinel‐type structure) phase was observed in both compositions. We observed the coexistence of the β and γ phases in Si3N4at 12.4 GPa and 1800°C, while the appearance of single phase γ‐Ge3N4was observed at pressures above 10 GPa. Our observations under higher pressures revealed that γ‐Si3N4and γ‐Ge3N4have wide stability fields and no postspinel transition was observed up to 98 GPa and 2400°C in both compositions. Using the room‐temperature compression curves of these materials, the bulk moduli (K0) and their pressure derivatives (K′0) were determined:K0= 317 (16) GPa andK′0= 6.0 (8) for γ‐Si3N4;K0= 254 (13) GPa andK′0= 6.0 (7) for γ‐Ge3N4.