Threshold switching stabilization of NbO2 films via nanoscale devices
Threshold switching stabilization of NbO2 films via nanoscale devices
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DOI：
10.1116/6.0002129
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发表时间：
2022-12
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影响因子：
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通讯作者：
M. C. Sullivan;Z. Robinson;K. Beckmann;Alex Powell;Ted Mburu;Katherine Pittman;N. Cady
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作者：
M. C. Sullivan;Z. Robinson;K. Beckmann;Alex Powell;Ted Mburu;Katherine Pittman;N. Cady
忆阻[公式：见正文]的阈值开关特性的稳定性作为样品生长和器件特性的函数进行检查。亚化学计量[公式：参见正文]通过磁控溅射沉积，并在纳米级（[式：参见正文]-[式：参见正文]）W/Ir/[式：参见正文]/TiN器件和微米级（[式：参见正文]-[式：参见正文]）交叉Au/Ru/[式：参见正文]/Pt器件中图案化。在700 [公式：见正文]C下退火纳米级器件消除了对电铸器件的需要。最小的纳米级器件在正偏压和负偏压的IV曲线中显示出很大的不对称性，该不对称性对于较大和微米级器件切换为对称行为。电铸微尺度交叉装置产生具有对称IV曲线的导电[公式：见正文]细丝，其行为不随装置面积增加而改变。最小的器件表现出最大的阈值电压和最稳定的阈值开关。随着纳米级器件面积的增加，器件的电阻随面积按比例缩放为[公式：见正文]，表明结晶体[公式：见正文]器件。当纳米级器件尺寸与细丝的尺寸相当时，退火的纳米级器件显示出与电铸的微米级交叉杆器件类似的电响应，表明即使在没有电铸的退火器件中也有类似的行为。最后，在薄膜中添加高达1.8%的Ti掺杂剂并没有改善或稳定微尺度交叉杆器件中的阈值切换。
The stabilization of the threshold switching characteristics of memristive [Formula: see text] is examined as a function of sample growth and device characteristics. Sub-stoichiometric [Formula: see text] was deposited via magnetron sputtering and patterned in nanoscale ([Formula: see text]–[Formula: see text]) W/Ir/[Formula: see text]/TiN devices and microscale ([Formula: see text]–[Formula: see text]) crossbar Au/Ru/[Formula: see text]/Pt devices. Annealing the nanoscale devices at 700 [Formula: see text]C removed the need for electroforming the devices. The smallest nanoscale devices showed a large asymmetry in the IV curves for positive and negative bias that switched to symmetric behavior for the larger and microscale devices. Electroforming the microscale crossbar devices created conducting [Formula: see text] filaments with symmetric IV curves whose behavior did not change as the device area increased. The smallest devices showed the largest threshold voltages and most stable threshold switching. As the nanoscale device area increased, the resistance of the devices scaled with the area as [Formula: see text], indicating a crystallized bulk [Formula: see text] device. When the nanoscale device size was comparable to the size of the filaments, the annealed nanoscale devices showed similar electrical responses as the electroformed microscale crossbar devices, indicating filament-like behavior in even annealed devices without electroforming. Finally, the addition of up to 1.8% Ti dopant into the films did not improve or stabilize the threshold switching in the microscale crossbar devices.