Nanoscale optical positioning of single quantum dots for bright, pure, and on-demand single-photon emission | NIST
Nanoscale optical positioning of single quantum dots for bright, pure, and on-demand single-photon emission | NIST
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单量子点的纳米级光学定位，实现明亮、纯净、按需的单光子发射|
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
K. Srinivasan
中科院分区：
文献类型：
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作者：
L. Sapienza;M. Davanco;A. Badolato;K. Srinivasan
自组装、外延生长的 InAs/GaAs 量子点是很有前途的半导体量子发射器，可以集成在芯片上，用于各种光子量子信息科学应用。然而，自组装生长导致量子点基本上随机的面内空间分布，这对创建利用单量子点与高度受限光学模式的强相互作用的设备提出了挑战。在这里，我们提出了一种光致发光成像方法，用于定位单个量子点的对准特征，其平均（最小）位置不确定度< 30 nm（< 10 nm），这代表了一种用于创建优化的单量子点器件的使能技术。为此，我们创建了基于圆形布拉格光栅几何形状的量子点单光子源，该源同时表现出高收集效率（0.4 数值孔径透镜为 48 % +/- 5 %，接近理论预测值 50 %）、低多光子概率（g(2)(0) <1 %）和显着的 Purcell 增强因子（~ 3）。
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of quantum dots, presenting a challenge in creating devices that exploit the strong interaction of single quantum dots with highly confined optical modes. Here, we present a photoluminescence imaging approach for locating single quantum dots with respect to alignment features with an average (minimum) position uncertainty < 30 nm (< 10 nm), which represents an enabling technology for the creation of optimized single quantum dot devices. To that end, we create quantum dot single-photon sources, based on a circular Bragg grating geometry, that simultaneously exhibit high collection efficiency (48 % +/- 5 % into a 0.4 numerical aperture lens, close to the theoretically predicted value of 50 %), low multiphoton probability (g(2)(0) <1 %), and a significant Purcell enhancement factor (~ 3).