Gold diffusion in silicon by Rapid Optical Annealing
Gold diffusion in silicon by Rapid Optical Annealing
复制标题
通过快速光学退火在硅中扩散金
DOI：
10.1007/bf00343418
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
R. Sittig
中科院分区：
文献类型：
--
作者：
C. Boit;F. Lau;R. Sittig
使用快速光学退火在 800°C 至 1200°C 的温度范围内以及从 300 秒降至 1 秒的退火时间研究金在硅中的扩散。所得到的替代金的含量通过扩散电阻测量来确定，并通过与大量数值模拟进行比较来进行分析。与长时间扩散后的U形相比，获得的剖面显示出更宽的光谱。冷却过程显着影响轮廓，因为它们取决于晶圆厚度。在冷却速率较小的厚晶圆中进行 1200°C 扩散后，发现了意想不到的渗透深度。这种现象是由于反向踢出、高度过饱和填隙金的深度扩散以及晶格位点的结合（称为 RDI 效应）的特殊组合造成的。只有在不同温度依赖性之间的敏感平衡得到遵守的情况下，数值计算才允许我们重现实验观察到的轮廓。因此，这些研究产生了有关硅间隙原子的平衡浓度和扩散的新信息。提出了一组最佳参数。首次量化了踢出过程的时间常数。
Gold diffusion in silicon is investigated using Rapid Optical Annealing at temperatures in the range of 800°C to 1200°C and annealing times from 300 s down to 1 s. The resulting content of substitutional gold is determined by spreading resistance measurements and analyzed by comparison with extensive numerical simulations.The profiles obtained show a broader spectrum as compared to theU-shapes after long time diffusion. The cooling process affects the profiles significantly, since they depend on the wafer thickness. An unexpected penetration depth was found after 1200°C diffusion in thick wafers, which are subject to small cooling rates. This phenomenon is due to a special combination of reverse kick-out, deep diffusion of highly supersaturated interstitial gold, and again an incorporation in lattice sites, termed the RDI effect.Numerical calculations allow us to reproduce the experimentally observed profiles only if a sensitive balance between the different temperature dependencies is obeyed. These investigations, therefore, yield new information about the equilibrium concentration and diffusion of silicon interstitials. A best set of parameters is presented. The time constant of the kick-out process is quantified for the first time.