Angle resolved optical metrology
Angle resolved optical metrology
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角度分辨光学计量
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Jun
中科院分区：
文献类型：
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作者：
R. Silver;B. Barnes;A. Heckert;R. Attota;R. Dixson;J. Jun
应用于半导体制造的线宽和重叠计量的光学计量技术的研究和开发已经有了实质性的增长。这一活动的大部分是在推进散射测量应用计量。近年来，我们一直在开发一种相关的技术称为散射场光学显微镜，它结合了散射测量和明场成像的元素。在本文中，我们提出了这种技术的应用，光学系统的对准，校准和表征的目的是准确的归一化的光学数据，这可以与光学模拟只涉及绝对测量参数。我们显示了一系列的实验数据，从线准备使用硅上的焦点曝光矩阵，并进行实验和理论结果之间的比较。数据显示协议的纳米尺度上使用参数模拟库和没有“可调”的参数。
There has been a substantial increase in the research and development of optical metrology techniques as applied to linewidth and overlay metrology for semiconductor manufacturing. Much of this activity has been in advancing scatterometry applications for metrology. In recent years we have been developing a related technique known as scatterfield optical microscopy, which combines elements of scatterometry and bright field imaging. In this paper we present the application of this technique to optical system alignment, calibration, and characterization for the purpose of accurate normalization of optical data, which can be compared with optical simulations involving only absolute measurement parameters. We show a series of experimental data from lines prepared using a focus exposure matrix on silicon and make comparisons between the experimental and theoretical results. The data show agreement on the nanometer scale using parametric simulation libraries and no "tunable" parameters.