Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)
Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)
复制标题
快速热退火对Si(100)和Si(111)上Ge1-xSnx薄膜结晶度和Sn表面偏析的影响
DOI：
10.1088/1674-1056/26/12/127306
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发表时间：
2017-12-01
影响因子：
1.7
通讯作者：
Zhang, He-Ming
中科院分区：
文献类型：
--
作者：
Miao, Yuan-Hao;Hu, Hui-Yong;Zhang, He-Ming
Germanium-tin films with rather high Sn content (28.04% and 29.61%) are deposited directly on Si (100) and Si (111) substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge1-xSnx films is investigated by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The x-ray diffraction (XRD) is also performed to determine the crystallinities of the Ge1-xSnx films. The experimental results indicate that root mean square (RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400 degrees C. The diameter of the Sn three-dimensional (3D) island becomes larger than that of an as-grown sample when the annealing temperature is 700 degrees C. In addition, the Sn surface composition decreases when annealing temperature ranges from 400 degrees C to 700 degrees C. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600 degrees C. The present investigation demonstrates that the crystallinity of Ge1-xSnx/Si (111) has no obvious advantage over that of Ge1-xSnx/Si (100) and the selection of Si (111) substrate is an effective method to improve the surface morphologies of Ge1-xSnx films. We also find that more severe Sn surface segregation occurs in the Ge1-xSnx/Si (111) sample during annealing than in the Ge1-xSnx/Si (100) sample.
