A Vanadium Dioxide Microbolometer in the Transition Region for Millimeter Wave Imaging
A Vanadium Dioxide Microbolometer in the Transition Region for Millimeter Wave Imaging
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DOI：
10.1109/apusncursinrsm.2019.8888891
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发表时间：
2019-07
期刊：
影响因子：
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通讯作者：
Shangyi Chen;M. Lust;N. Ghalichechian
中科院分区：
文献类型：
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作者：
Shangyi Chen;M. Lust;N. Ghalichechian
本文介绍了一种新型微测辐射热计的设计，该微测辐射热计在毫米波 (mmW) 波段对无源成像阵列（相机）表现出高响应度。主要目标是通过在过渡悬崖 (~68 °C) 处偏置传感器来利用相变材料 (PCM) 二氧化钒 (VO2) 的非线性行为。仿真结果与计算结果显示 7.5×103 V/W 的高响应度和 6.1 pW/√Hz 的低噪声等效功率 (NEP)。所提出的微测辐射热计的相应响应时间为 376 µs。与最先进的传感器相比，器件性能提高了两个数量级，这是微机电系统 (MEMS) 微加工处理悬浮在空气中以及 VO2 在其过渡区域电阻率急剧变化的直接结果。
This paper presents the design of a new class of microbolometer that exhibits high responsivity for passive imaging arrays (camera) at millimeter wave (mmW) band. The main objective is to exploit the non-linear behavior of phase-change material (PCM) vanadium dioxide (VO2) by biasing the sensor at the transition cliff (~68 °C). Simulated results together with calculations show high responsivity of 7.5×103 V/W and low noise equivalent power (NEP) of 6.1 pW/√Hz. The corresponding response time of the proposed microbolometer is 376 µs. Two orders of magnitude improvement in device performance as compared with the state-of-the-art sensors is the direct result of both suspension in air by micro-electro-mechanical systems (MEMS) microfabrication processing as well as the sharp change in resistivity of VO2 in its transition region.