Oscillation of the optical second-harmonic generation intensity during Ag thin film growth on a Si(111)7X7 surface
Oscillation of the optical second-harmonic generation intensity during Ag thin film growth on a Si(111)7X7 surface
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DOI：
10.1103/physrevb.64.195415
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发表时间：
2001-11-15
影响因子：
3.7
通讯作者：
Takayanagi, K
中科院分区：
文献类型：
--
作者：
Hirayama, H;Kawata, T;Takayanagi, K
在室温下，在Si（111）7 × 7表面上生长Ag薄膜期间，光学二次谐波产生（SHG）强度表现出明显的振荡。第一个强度峰出现在两个单层（ML）为1.20，1.30，和1.40 eV的泵浦光子能量，和第二个峰转移到较低的覆盖面一侧的激发光子能量的增加。SHG光谱和原子力显微镜图像表明，第一个峰是由于孤立的银岛中的等离子体激元引起的局部场增强。第二个峰是由与限制在平坦Ag薄膜中的量子化电子态的共振引起的。
The optical second harmonic generation (SHG) intensity demonstrated clear oscillations during Ag thin film growth on an Si(111)7x7 surface at room temperature. The first intensity peak appeared at two monolayer (ML) for 1.20, 1.30, and 1.40 eV pump photon energies, and the second peak shifted to a lower coverage side with increases in the excitation photon energy. The SHG spectra and atomic force microscope images indicated that the first peak was due to local field enhancement by the plasmon confined in isolated Ag islands. The second peak was caused by resonance with the quantized electronic states confined in the flat Ag thin film.