Design of Sense Amplifiers for Non-Volatile Memory
Design of Sense Amplifiers for Non-Volatile Memory
复制标题
非易失性存储器读出放大器的设计
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
A. Barić
中科院分区：
文献类型：
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作者：
I. Tolic;Josip Mikulić;G. Schatzberger;A. Barić
本文采用180 nm工艺设计和制造了四种不同结构的读出放大器，并在速度、面积和精度等方面进行了比较。前两个放大器是基于锁存的，第三个是基于电流采样的，第四个结构结合了电流传送器和比较器。结果表明，第一、二、三、四放大的最小检测时间分别为：4.32 ns、6.01 ns、7.33 ns和13.22 ns。得到的精度分别为：$7.6万元，亩元A}元，$7.9万元，元.~7元，亩元{A}元和$18.4元，亩元{A}元，电路面积分别为：$156.54，亩元{2}元，$212.18，亩元{m}^{2}元，$2147.44，亩元{m}^{2}元和$3755.65，亩元{m}^{2}元。对制作的样品进行了实验验证。
In this paper, four sense amplifiers using different architectures are designed and manufactured in 180 nm technology and compared in terms of speed, area and precision. First two amplifiers are latch-based, the third is current-sampling-based and the fourth architecture combines the current conveyor with the comparator. The results show that the minimal sensing time is equal to: 4.32 ns, 6.01 ns, 7.33 ns and 13.22 ns for the first, second, third and fourth amplifier, respectively. The achieved precision is equal to: $7.6,mu mathrm {A}$, $7.9,mu mathrm {A}$, $6.~7,mu mathrm {A}$ and $18.4,mu mathrm {A}$, having the areas of the circuit equal to: $156.54,mu mathrm {m}^{2}$, $212.18,mu mathrm {m}^{2}$, $2147.44,mu mathrm {m}^{2}$ and $3755.65,mu mathrm {m}^{2}$, respectively. The manufactured samples were verified experimentally.