Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride
Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride
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DOI：
10.1088/2053-1583/3/3/035029
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发表时间：
2016-09-01
期刊：
影响因子：
5.5
通讯作者：
Yi, Gyu-Chul
中科院分区：
文献类型：
--
作者：
Park, Joon Young;Lee, Gil-Ho;Yi, Gyu-Chul
报道了在六方氮化硼（h-BN）衬底上分子束外延生长高质量拓扑绝缘体Bi_2Se_3薄膜的方法和性能。两步生长，提高了h-BN上的薄膜的表面覆盖率和结晶度。高分辨率透射电子显微镜研究表明，在h-BN衬底和Bi 2Se 3之间形成原子突变和外延界面。我们进行了栅极调谐的磁输运特性的薄膜上制造的设备，并确认在Bi 2Se 3/h-BN界面的高迁移率的表面状态。由Shubnikov-de哈斯振荡得到的Berry相表明该界面电子态是拓扑保护的Dirac态。
We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov-de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state.