387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source

387-nm Generation in GdxY1-xCa4O(BO3)3 Crystal and Its Utilization for 193-nm Light Source
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GdxY1-xCa4O(BO3)3 晶体中 387 nm 的产生及其在 193 nm 光源中的应用

DOI:
10.1143/jjap.42.l166
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发表时间:
2003
影响因子:
1.5
通讯作者:
T. Sasaki
T. Sasaki
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
H. Kitano;H. Kawai;K. Muramatsu;S. Owa;M. Yoshimura;Y. Mori;T. Sasaki

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本文报道了GdxY 1-xCa 4 O(BO 3)3晶体在I型非临界相位匹配条件下的近紫外光产生。GdxY 1-xCa 4 O(BO 3)3也被应用于基于掺铒光纤放大器输出1547 nm的八次谐波的193 nm深紫外激光源,其中GdxY 1-xCa 4 O(BO 3)3(x = 0.68)用于387 nm的产生。使用这种紧凑的光源,5%的转换效率,从1547 nm的输入到193 nm的输出是在18千瓦的基本峰值功率实现。
We report on near-UV generation in GdxY1-xCa4O(BO3)3 crystals used under type-I non-critical phase-matching conditions. GdxY1-xCa4O(BO3)3 was also applied to a 193-nm deep-UV laser source based on the eighth harmonic of an erbium-doped fiber amplifier output at 1547 nm, in which GdxY1-xCa4O(BO3)3 (x = 0.68) was used for 387-nm generation. Using this compact light source, 5% conversion efficiency from the 1547-nm input to the 193-nm output was achieved at a fundamental peak power of 18 kW.