Determination of spin-orbit coefficients in semiconductor quantum wells
Determination of spin-orbit coefficients in semiconductor quantum wells
复制标题
DOI：
10.1103/physrevb.83.115309
复制
发表时间：
2011-03
影响因子：
3.7
通讯作者：
S. Faniel;T. Matsuura;S. Mineshige;Y. Sekine;T. Koga
中科院分区：
文献类型：
--
作者：
S. Faniel;T. Matsuura;S. Mineshige;Y. Sekine;T. Koga
我们报告的内在自旋轨道相互作用（SOI）参数的测定在0。53 Ga 0 . 47 As / In 0 . 52 Al 0 . 48 As量子威尔斯（QW）的弱反定域效应分析。结果表明，DresselhausSOI在该系统中几乎可以忽略，Rashba效应的本征参数a SO_α/（cid：3）E_z（cid：4）为a SO_m_α/m_e =（1 . 46-1 . 51 × 10 − 17 N S [m − 2 ]）e <$A 2，其中α是Rashba SOI系数，（cid：3）E z（cid：4）是QW内的预期电场，m E/m e是电子有效质量比，N S是片载流子密度。在我们最不对称的量子阱样品中观察到的舒布尼科夫-德哈斯振荡中的跳动也证实了SO m的这些值。
We report the determination of the intrinsic spin-orbit interaction (SOI) parameters for In 0 . 53 Ga 0 . 47 As / In 0 . 52 Al 0 . 48 As quantum wells (QWs) from the analysis of the weak antilocalization effect. We show that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameter for the Rashba effect, a SO ≡ α/ (cid:3) E z (cid:4) , is given to be a SO m ∗ /m e = (1 . 46–1 . 51 × 10 − 17 N S [m − 2 ]) e ˚A 2 , where α is the Rashba SOI coefficient, (cid:3) E z (cid:4) is the expected electric field within the QW, m ∗ /m e is the electron effective mass ratio, and N S is the sheet carrier density. These values for a SO m ∗ were also confirmed by the observation of beatings in the Shubnikov–de Haas oscillations in our most asymmetric QW sample.