Analysis of sidewall quality in through-wafer deep reactive-ion etching
Analysis of sidewall quality in through-wafer deep reactive-ion etching
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DOI：
10.1016/j.mee.2004.02.064
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发表时间：
2004-06-01
影响因子：
2.3
通讯作者：
Semple, T
中科院分区：
文献类型：
--
作者：
Pike, WT;Karl, WJ;Semple, T
利用扫描电子显微镜、原子力显微镜和干涉仪分析了反应离子深刻蚀产生的沟道侧壁的质量。侧壁质量和轮廓高度依赖于蚀刻通道的宽度。窄于100 μ m的通道通常显示出良好的侧壁光滑度，尽管具有弓形轮廓。该轮廓导致朝向沟道侧壁的底部的离子诱导损伤。相比之下，较宽的通道表现出侧壁的过钝化，具有厚聚合物堆积区域，随后是垂直条纹和非常粗糙的表面，但具有整体垂直轮廓。我们的观察结果支持了其他研究人员提出的从沟槽底部到侧壁的钝化再沉积。(C)2004 Elsevier B.V.保留所有权利。
The quality of channel sidewalls resulting from through-wafer deep reactive-ion etching is analysed using scanning electron microscopy, atomic-force microscopy and interferometry. Sidewall quality and profile are highly dependent on the width of the etched channel. Channels narrower than 100 mum show generally good sidewall smoothness, though with a bowed profile. This profile leads to ion-induced damage towards the bottom of the channel sidewall. Wider channels, in contrast, exhibit overpassivation of the sidewalls with a region of thick polymer build-up followed by vertical striations and a very rough surface, but with an overall vertical profile. Redeposition of the passivation from the trench bottom to the sidewalls as suggested by other researchers is supported by our observations. (C) 2004 Elsevier B.V. All rights reserved.