Application of laser driven fast high density plasma blocks for ion implantation
Application of laser driven fast high density plasma blocks for ion implantation
复制标题
激光驱动快速高密度等离子体块在离子注入中的应用
DOI：
10.1017/s0263034605050652
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发表时间：
2005
影响因子：
0.9
通讯作者：
M. Hantehzadeh
中科院分区：
文献类型：
--
作者：
A. Sari;F. Osman;K. R. Doolan;M. Ghoranneviss;H. Hora;R. Höpfl;G. Benstetter;M. Hantehzadeh
基于一种新的趋肤深度相互作用过程，对ps-TW激光脉冲辐照靶产生的高离子能量的极窄高密度等离子体块进行测量，是离子注入材料，特别是硅、GaAs或导电聚合物，微电子以及低成本太阳能电池的理想工具。另一个应用是加速器中的离子源，与经典离子源相比，大多数规格都有许多数量级的进步。我们报告近带隙产生的缺陷注入离子的光吸收光谱测量。本文给出了从亚阈粒子束研究n型半导体到p型半导体的粒子束转换的进一步联系。其优点在于，在工业应用中使用射束技术时，避免使用腐蚀性或稀有化学材料。
The measurement of very narrow high density plasma blocks of high ion energy from targets irradiated with ps-TW laser pulses based on a new skin depth interaction process is an ideal tool for application of ion implantation in materials, especially of silicon, GaAs, or conducting polymers, for micro-electronics as well as for low cost solar cells. A further application is for ion sources in accelerators with most specifications of many orders of magnitudes advances against classical ion sources. We report on near band gap generation of defects by implantation of ions as measured by optical absorption spectra. A further connection is given for studying the particle beam transforming of n-type semiconductors into p-type and vice versa as known from sub-threshold particle beams. The advantage consists in the use of avoiding aggressive or rare chemical materials when using the beam techniques for industrial applications.