Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
复制标题
DOI：
10.1016/j.jpcs.2005.09.007
复制
发表时间：
2005-11
影响因子：
4
通讯作者：
S. Chichibu;T. Ohmori;Naoyuki Shibata;Takahiro Koyama;T. Onuma
中科院分区：
文献类型：
--
作者：
S. Chichibu;T. Ohmori;Naoyuki Shibata;Takahiro Koyama;T. Onuma
由p型（001）cugas2黄铜矿半导体薄膜和优先（0001）取向多晶n型ZnO薄膜组成的异质结发光二极管（led）发出了绿白色的电致发光。采用金属有机气相外延法在（001）GaP衬底上生长cugas2薄膜，采用无表面损伤的螺旋波激发等离子溅射法制备ZnO薄膜。设计了n-ZnO/p-CuGaS2LED结构，使电子从n型宽带隙材料注入形成i型异质结。发光光谱在1.6 ~ 2.5eV之间，但其高能量部分被GaP衬底吸收。由于光谱线形状与相同cugas2涂层的光致发光相似，因此EL被认为来自p-CuGaS2。
Greenish-white electroluminescence (EL) was observed from the heterojunction light-emitting diodes (LEDs) composed of p-type (001) CuGaS2chalcopyrite semiconductor epilayers and preferentially (0001)-oriented polycrystalline n-type ZnO thin films. The CuGaS2layers were grown on a (001) GaP substrate by metalorganic vapor phase epitaxy and the ZnO films were deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The n-ZnO/p-CuGaS2LED structure was designed to enable an electron injection from the n-type wider band gap material forming a TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5eV, although their higher energy portions were absorbed by the GaP substrate. Since the spectral lineshape resembled that of the photoluminescence from identical CuGaS2epilayers, the EL was assigned to originate from p-CuGaS2.