Electro-optic property of ZnO:Mn epitaxial films
Electro-optic property of ZnO:Mn epitaxial films
复制标题
ZnO:Mn外延薄膜的电光性能
DOI:
10.1002/pssc.200779246
复制
发表时间:
2008
期刊:
影响因子:
--
通讯作者:
N. Fujimura
中科院分区:
文献类型:
--
作者:
Takeshi Oshio;K. Masuko;A. Ashida;T. Yoshimura;N. Fujimura
Mn doping effect on the dielectric and electro-optic (E-O) property of ZnO epitaxial films was studied. The leakage current of the ZnO film is drastically decreased by doping Mn with the concentration of 3-5 at%. Although, ZnO: 4 at% Mn with the lowest leakage current has the largest frequency dispersion of birefringence shift (Δ n) at 1 kHz, and its E-O coefficient (rc) was larger than that of ZnO single crystal. It is presumably caused by another polarization effect but spontaneous polarization, such as space charge. To investigate the origin of the dispersion of Δ n, discharging property was evaluated. When the signal at 1 kHz was applied, ZnO: 3 and 5 at% Mn showed the discharging with relaxation time of 5 msec. Furthermore, the discharging property with same relaxation time was observed at 20 kHz at where the dispersion of Δ n was not observed. However, ZnO: 4 at% Mn does not show such a discharging behavior. Therefore, it is considered that the space charge is not the origin of the dispersion of Δ n. On the other hand, the dispersion of Δ n was minimum and no dielectric dispersion was observed at 20 kHz for all samples. The rc of ZnO: 3, 4 and 5 at% Mn measured at 20 kHz, which should be the rc originated from the spontaneous dipolar polarization, were derived to be 0.81, 0.81 and 0.62 pm/V, respectively. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
影响因子:
1.5
作者:
T. Nagata;A. Ashida;N. Fujimura;T. Ito
通讯作者:
T. Nagata;A. Ashida;N. Fujimura;T. Ito