Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate
Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate
复制标题
有损硅衬底上片上互连的频率相关线路参数的精确闭式表达式
DOI：
10.1109/tadvp.2002.803267
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
A. Luoh
中科院分区：
文献类型：
--
作者：
A. Weisshaar;H. Lan;A. Luoh
提出了有损硅衬底上微带线的频率相关 R、L、G、C 线参数的精确闭式表达式。使用复图像方法获得频率相关串联阻抗参数的闭合形式表达式。与频率相关的并联导纳参数以在低频和高频限制下获得的并联电容的闭合形式表示。所提出的封闭式解决方案与电磁解决方案非常一致。
Accurate closed-form expressions for the frequency-dependent R,L,G,C line parameters of microstrip lines on lossy silicon substrate are presented. The closed-form expressions for the frequency-dependent series impedance parameters are obtained using a complex image method. The frequency-dependent shunt admittance parameters are expressed in closed form in terms of the shunt capacitances obtained in the low and high frequency limits. The proposed closed-form solutions are shown to be in good agreement with the electromagnetic solutions.