Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films
Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films
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DOI：
10.1063/1.1483104
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发表时间：
2002-06
影响因子：
3.2
通讯作者：
D. Young;H. Moutinho;Yanfa Yan;T. Coutts
中科院分区：
文献类型：
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作者：
D. Young;H. Moutinho;Yanfa Yan;T. Coutts
采用射频磁控溅射法在玻璃衬底上制备了单相尖晶石锡酸锌（Zn 2SnO 4）薄膜。单轴取向薄膜的折射率为10−2-10−3 Ω cm，迁移率为16-26 cm 2/V s，n型载流子浓度在1019 cm−3的低范围内。X射线衍射峰强度的研究建立了反尖晶石结构的薄膜。119 Sn穆斯堡尔谱研究确定了两个八面体Sn位置，每个都有独特的四极分裂，但具有与Sn+4一致的共同异构体位移。一个明显的Burstein-Moss位移移动的光学带隙从3.35高达3.89 eV。态密度的有效质量，弛豫时间，迁移率，费米能级，和散射参数计算电阻率，霍尔，塞贝克，能斯特系数传输数据。连续质量值随着载流子浓度从0.16增加到0.26我的费米能量增加从0.2到0.9 eV以上的导带最小值。最差的
Single-phase, spinel zinc stannate (Zn2SnO4) thin films were grown by rf magnetron sputtering onto glass substrates. Uniaxially oriented films with resistivities of 10−2–10−3 Ω cm, mobilities of 16–26 cm2/V s, and n-type carrier concentrations in the low 1019 cm−3 range were achieved. X-ray diffraction peak intensity studies established the films to be in the inverse spinel configuration. 119Sn Mossbauer studies identified two octahedral Sn sites, each with a unique quadrupole splitting, but with a common isomer shift consistent with Sn+4. A pronounced Burstein–Moss shift moved the optical band gap from 3.35 to as high as 3.89 eV. Density-of-states effective mass, relaxation time, mobility, Fermi energy level, and a scattering parameter were calculated from resistivity, Hall, Seebeck, and Nernst coefficient transport data. Effective-mass values increased with carrier concentration from 0.16 to 0.26 me as the Fermi energy increased from 0.2 to 0.9 eV above the conduction-band minimum. A bottom-of-the-band ...