Growth of nanostructured molybdenum disulfide (MoS2) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)
Growth of nanostructured molybdenum disulfide (MoS2) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)
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DOI：
10.1063/5.0153256
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发表时间：
2023-05
期刊：
影响因子：
1.6
通讯作者：
Zhigang Xiao;G. Doerk;K. Kisslinger;A. Jones;Rebhadevi Monikandan
中科院分区：
文献类型：
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作者：
Zhigang Xiao;G. Doerk;K. Kisslinger;A. Jones;Rebhadevi Monikandan
采用等离子体增强原子层沉积技术在纳米孔图案硅衬底上生长了纳米结构的二硫化钼(MoS2)薄膜。采用基于自组装的纳米加工方法，制备了用于生长MoS_2薄膜的纳米级空穴图案硅衬底。纳米孔可以显着增加衬底的表面积，而纳米结构的形成和生长通常是从衬底的表面开始的。在二硫化钼(MoS_2)生长中，以硫化氢(H_2S)气体为S源，以氯化钼(MoCl5)粉为钼源。MoS_2薄膜的化学计量比为1(Mo)：2(S)，并有E12g和A1g峰，分别代表Mo-S键的面内和面外振动模式。研究发现，虽然MoS_2薄膜为非晶态结构，但由于纳米尺度的空间约束和纳米尺度界面的影响，在纳米尺度的空穴中生长的MoS_2薄膜，尤其是在孔壁生长的MoS_2薄膜，具有更多的六方结构。生长后800~900℃的高温退火在薄膜中形成了局域晶体结构，这与其他研究人员报道的结果是一致的。
Nanostructured molybdenum disulfide (MoS2) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H2S) gas was used as the S source in the growth of molybdenum disulfide (MoS2) while molybdenum (V) chloride (MoCl5) powder was used as the Mo source. The MoS2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E12g and A1g, which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers.