Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
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DOI：
10.1016/j.jcrysgro.2009.01.071
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发表时间：
2009-05-01
影响因子：
1.8
通讯作者：
Lee, Wei-I
中科院分区：
文献类型：
--
作者：
Huang, Hsin-Hsiung;Chao, Chu-Li;Lee, Wei-I
通过氢化物气相外延 (HVPE) 生长，证明直径 1.5 英寸的 300 pm GaN 厚膜没有任何裂纹。用于缓解由于GaN和蓝宝石衬底之间的热膨胀系数(TEC)和晶格常数差异而产生的残余应力以防止GaN薄膜破裂的技术称为点空气桥结构。经过激光剥离工艺后，可以制造出 300 微米厚、直径 1.5 英寸的独立式 GaN 晶圆。通过E-2（高）声子模式的微拉曼光谱测量了点空气桥结构中的压应力。压应力可降至0.04 GPa，可防止HVPE外延生长过程中的裂纹。获得大面积无裂纹的GaN厚膜对于制作独立式GaN晶圆具有重要意义。皇冠版权所有 (C) 2009 由 Elsevier B.V. 出版。保留所有权利。
A 300 pm GaN thick-film, in diameter 1.5 in, was demonstrated without any crack by hydride vapor phase epitaxy (HVPE) growth. The technique used in relaxing the residual stress caused by differences of thermal expansion coefficients (TEC) and lattice constants between GaN and sapphire substrate to prevent GaN film from crack is called a dot air-bridged structure. After the laser lift-off process, 300-mu m-thick freestanding GaN wafer, in diameter 1.5 in, could be fabricated. The compressive stress in the dot air-bridged structure was measured by micro-Raman spectroscopy with the E-2(high) phonon mode. The compressive stress could be reduced to as small as 0.04 GPa, which could prevent the crack during the epitaxial process for GaN growth by HVPE. It is important to obtain a large-area crack-free GaN thick-film, which can be used for fabricating freestanding GaN wafer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.