Anisotropic nature of hole g-factor in individual InAs quantum rings
Anisotropic nature of hole g-factor in individual InAs quantum rings
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DOI：
10.1002/pssb.201600486
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发表时间：
2017-02-01
影响因子：
1.6
通讯作者：
Adachi, S.
中科院分区：
文献类型：
--
作者：
Kaji, R.;Tominaga, T.;Adachi, S.
用实验和理论方法研究了InAs/GaAs量子环中电子和空穴自旋的面内g因子（g垂直于e，g垂直于h）.从测量中，我们发现实验获得的\g垂直于h\变化很大，从QR到QR，而\g垂直于e\的变化很小。此外，空穴g因子的面内（x-y）和面外（x-z）各向异性也得到了明显的证实，而电子g因子在两种情况下都表现出各向同性.从模型计算，形状各向异性和单轴应力的影响进行了检查。QR中的形状各向异性修改了空穴波函数的空间分布。因此，它带来了价带混合度和垂直于h的g的变化，并与单轴应力相结合，实现了垂直于h的g的更大调制。虽然更详细的讨论是必要的，在这个阶段，我们的研究结果将提供有价值的信息，在半导体纳米结构的g因子控制。
The in-plane g-factors of electron and hole spins (g perpendicular to e, g perpendicular to h) confined in the individual InAs/GaAs quantum rings (QRs) were investigated by using experimental and theoretical approaches. From the measurements, we found that the experimentally obtained \g perpendicular to h\varies largely from QR to QR, while the variation in \g perpendicular to e\ is small. In addition, the in-plane (x-y) and the out-of-plane (x-z) anisotropies in hole g-factor were obviously confirmed while the electron g-factor exhibits isotropic natures in both cases. From the model calculations, the effects of the shape anisotropies and the uniaxial stress were examined. The shape anisotropy in QRs modifies the spatial distributions of hole wavefunctions. Thus, it brings the resultant changes in the degree of valence-band mixing and \g perpendicular to h\, and combined with uniaxial stress, a larger modulation in \g perpendicular to h\ was achieved. Although more detailed discussions are necessary at this stage, our findings will give valuable information for the g-factor control in semiconductor nanostructures.