Electrochemical Synthesis and Nonvolatile Resistance Switching of Mn3O4 Thin Films
Electrochemical Synthesis and Nonvolatile Resistance Switching of Mn3O4 Thin Films
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DOI：
10.1021/cm5014027
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发表时间：
2014-07
影响因子：
8.6
通讯作者：
J. Koza;I. Schroen;M. Willmering;J. Switzer
中科院分区：
文献类型：
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作者：
J. Koza;I. Schroen;M. Willmering;J. Switzer
本文介绍了一种从水溶液中制备Mn_3O_4晶体薄膜的电沉积方法。在pH 6和80 °C的沉积温度下，从0.2 M Mn（II）乙酸盐溶液恒电位电沉积膜。阳极沉积在相对于Ag/AgCl/KCl（饱和）的0.275-0.350 V的电位范围内进行。在该电位范围内，电流效率为100%。薄膜的化学计量比和形貌都可以通过施加的电势来控制。在低过电位下沉积的膜生长具有[001]优选取向、柱状微观结构和接近化学计量的Mn（III）/Mn（II）比为1.99。在较高过电位下沉积的膜存款具有近随机取向、多孔或粉末状微观结构，并且Mn（III）/Mn（II）比为2.62。在大于0.38 V的电势下，产生MnO 2的非晶膜。沉积态的Mn_3O_4具有非常高的电阻率，为4.4 × 108 Ωcm。电沉积的Mn 3 O 4薄膜经历了单极、非挥发性的抗蚀过程。
An electrodeposition method is introduced to produce crystalline films of Mn3O4 from aqueous solution. The films are electrodeposited potentiostatically from a solution of 0.2 M Mn(II) acetate at a pH of 6 and a deposition temperature of 80 °C. The anodic deposition is performed in the potential range of 0.275–0.350 V vs Ag/AgCl/KCl(sat.). In this potential range the current efficiency is 100%. Both the stoichiometry and the morphology of the films can be controlled through the applied potential. Films deposited at a low overpotential grow with a [001] preferred orientation, columnar microstructure, and near-stoichiometric Mn(III)/Mn(II) ratio of 1.99. Films deposited at higher overpotential deposit with a near-random orientation, porous or powdery microstructure, and Mn(III)/Mn(II) ratio of 2.62. At potentials greater than 0.38 V, amorphous films of MnO2 are produced. The as-deposited Mn3O4 has a very high resistivity of 4.4 × 108 Ωcm. The electrodeposited Mn3O4 films undergo unipolar, nonvolatile resist...