The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching
The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching
复制标题
超晶格城堡型场效应晶体管 (SLCFET)：一种新颖的高性能晶体管拓扑，非常适合射频开关
DOI：
10.1109/iedm.2014.7047033
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
R. Chris Clarke
中科院分区：
文献类型：
--
作者：
Robert S. Howell;Eric J. Stewart;R. Freitag;J. Parke;B. Nechay;H. Cramer;M. King;Shalini Gupta;J. Hartman;M. Snook;I. Wathuthanthri;Parrish Ralston;K. Renaldo;H. George Henry;R. Chris Clarke
NGES报道了一种新型晶体管结构的开发，该晶体管结构基于具有3D栅极的GaN超晶格沟道，称为SLCFET（超晶格城堡场效应晶体管）。晶体管测量提供的中值为I<sub>MAX</sub>>2.7 A/mm，V<sub>PINCH</sub> =-8V，R<sub>ON</sub> =0.41 Ω-mm，C<sub>OFF</sub> =0.19 pF/mm，RF开关FOM为F<sub>CO</sub> =2.1 THz。
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of I<sub>MAX</sub>>2.7 A/mm, V<sub>PINCH</sub> = -8V, with R<sub>ON</sub>=0.41 Ω-mm and C<sub>OFF</sub>=0.19 pF/mm, for an RF switch FOM of F<sub>CO</sub>=2.1 THz.