Chemical trends of the band gaps of idealized crystal of semiconducting silicon clathrates, M8Si38A8 (M = Na, K, Rb, Cs; A = Ga, Al, In), predicted by first-principle pseudopotential calculations
Chemical trends of the band gaps of idealized crystal of semiconducting silicon clathrates, M8Si38A8 (M = Na, K, Rb, Cs; A = Ga, Al, In), predicted by first-principle pseudopotential calculations
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通过第一原理赝势计算预测的半导体硅包合物理想化晶体 M8Si38A8（M = Na、K、Rb、Cs；A = Ga、Al、In）的带隙化学趋势
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
M. Imai
中科院分区：
文献类型：
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作者：
Y. Imai;M. Imai
