Selective Growth of GaAs by Molecular Beam Epitaxy

Selective Growth of GaAs by Molecular Beam Epitaxy
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分子束外延选择性生长砷化镓

DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Mitsuo Kawabe Mitsuo Kawabe
Mitsuo Kawabe Mitsuo Kawabe
中科院分区：
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文献类型：
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作者：
T. Sugaya;Yoshitaka Okada Yoshitaka Okada;Mitsuo Kawabe Mitsuo Kawabe

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通过在分子束外延中使用原子氢辐射，在 580°C 下可以在覆盖有 SiNx 的图案化 GaAs 衬底上选择性外延生长 GaAs。选择性生长的机制主要是由于GaAs从掩模SiNx中的再蒸发。 GaAs从SiNx表面的再蒸发速率比从SiO2表面的再蒸发速率大，因此使用SiNx掩模可以更容易地实现GaAs的选择性生长。 GaAs 的外延图案具有清晰的晶面。在沿 [110] 的线和空间图案中，出现 (11̄0)、(111)B 和 (211)B 面，在 [11̄0] 线中，出现 (311)A 和 (111)A 面。没有边缘峰化，侧壁肯定反映了掩模边缘边界。
Selective epitaxial growth of GaAs on patterned GaAs substrates covered with SiNx have been demonstrated at 580°C by using atomic hydrogen irradiation in molecular beam epitaxy. The mechanism of the selective growth is mainly due to the re-evaporation of GaAs from the mask, SiNx. Re-evaporation rate of GaAs from the SiNx surface is larger than that from the SiO2 surface, and hence the selective growth of GaAs can be more easily achieved using SiNx mask. The epitaxial patterns of GaAs have clear crystal facets. In the line and space patterns along [110], (11̄0), (111)B and (211)B faces appear and in the [11̄0] line, (311)A and (111)A faces appear. There are no edge peaking and the side wall definitely reflects the mask edge boundary.