Effects of heat treatment on the chemical states of O1s and Sn3d at the surface of SnOx:F films by APCVD
Effects of heat treatment on the chemical states of O1s and Sn3d at the surface of SnOx:F films by APCVD
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DOI：
10.1016/j.matlet.2012.07.055
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发表时间：
2013
影响因子：
3
通讯作者：
Jingkai Yang;Hongli Zhao;Fucheng Zhang
中科院分区：
文献类型：
--
作者：
Jingkai Yang;Hongli Zhao;Fucheng Zhang
X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical states of O1s and Sn3d at the surface of SnOx:F films as-deposited and post-heated at 700°C for 202s and 262s. The effects of heat treatment on the surface chemistry of SnOx:F films were discussed for the analysis of conductivity. The results show that there are three kinds of components of O1s and Sn3d at the surface and the binding energy of all components moves to higher values after post-heating. The ratio [OI]/[OII] at the surface decreases from 1.80 for the as-deposited film to 0.74 for the film heated for 262s. The as-deposited films exhibit evident non-stoichiometry with relative concentration [O]/[Sn] equal to 1.46. After heat treatment, the relative concentration is higher than the stoichiometry value of 2.
