Correlation between antisymmetric magnetoresistance and anomalous hall effect in Co1− x Tb x films
Correlation between antisymmetric magnetoresistance and anomalous hall effect in Co1− x Tb x films
复制标题
DOI：
10.1088/1361-6463/ac6cb6
复制
发表时间：
2022-05
期刊：
影响因子：
--
通讯作者：
Yangtao Su;Yang Meng;Zhen Wang;T. Xu;Haibin Shi;Li Wang;Xinyu Cao;Ying Zhang;Hongwu Zhao-Ho
中科院分区：
文献类型：
--
作者：
Yangtao Su;Yang Meng;Zhen Wang;T. Xu;Haibin Shi;Li Wang;Xinyu Cao;Ying Zhang;Hongwu Zhao-Ho
在梯度磁场下，研究了不同Tb浓度的Co1−x Tb x垂直磁化薄膜的反对称磁电阻（MR）和反常霍尔效应（AHE）。由于倾斜畴壁的存在，Co1−x Tb x膜表现出反常的反对称MR，其极性反转强烈依赖于膜的组成，并且与同时测量的AHE完全一致。我们的研究结果表明，在远离补偿点的Co1−x Tb x合金薄膜中，杂质和色散畴壁边界的无序散射效应更为明显。此外，AHE系数Rs的调制直接导致了反对称磁流变的显著变化，为基于畴壁的电子器件的设计提供了新的见解。
The antisymmetric magnetoresistance (MR) and anomalous Hall effect (AHE) of perpendicularly magnetized Co1−x Tb x thin films with different Tb concentration have been investigated under gradient magnetic fields. Owing to the presence of tilting domain walls, the Co1−x Tb x films exhibit anomalous antisymmetric MR, whose polarity reversal is strongly dependent on the film composition and exactly consistent with the simultaneously measured AHE. Our results suggest that the effect of disorder scattering from impurities and dispersive domain wall boundaries is more pronounced in Co1−x Tb x alloy films distant from the compensation point. Moreover, the modulation of AHE coefficient Rs directly leads to the remarkable variation of antisymmetric MR, providing a new insight into design of domain wall based electronic devices.