Impact of wide band gap devices on power electronics packaging designs
Impact of wide band gap devices on power electronics packaging designs
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发表时间：
2017-02
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通讯作者：
C. Bailey;P. Rajaguru;H. Lu
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作者：
C. Bailey;P. Rajaguru;H. Lu
Wide band gap devices (e.g. Silicon Carbide, Gallium Nitride, etc.) provide significant opportunities for the power electronics industry. Compared to silicon, they have faster switching frequencies, better heat dissipation, and can operate at higher temperatures. But, WBG devices pose several challenges in terms of their packaging. This paper details the need for a co-design and simulation approach for packaging for wide band gap devices. Thermo-mechanical modelling for an IGBT module is discussed where both silicon (Si) and silicon carbide (SiC) are compared. The influence of higher Young's Modulus of SiC and the impact of sintered silver interconnects is detailed. The use of a press pack construction is also detailed and contact pad materials such as molybdenum and aluminium graphite their impact on stress and junction temperature are detailed. In summary, innovative solutions will be required in packaging designs to support growth in applications of wide band gap devices.
