Optical simulation of external quantum efficiency spectra of CuIn1-xGaxSe2 solar cells from spectroscopic ellipsometry inputs
Optical simulation of external quantum efficiency spectra of CuIn1-xGaxSe2 solar cells from spectroscopic ellipsometry inputs
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DOI:
10.1016/j.jechem.2017.10.029
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发表时间:
2018-07-01
影响因子:
13.1
通讯作者:
Collins, Robert W.
中科院分区:
文献类型:
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作者:
Ibdah, Abdel-Rahman A.;Koirala, Prakash;Collins, Robert W.
Applications of in-situ and ex-situ spectroscopic ellipsometry (SE) are presented for the development of parametric expressions that define the real and imaginary parts (epsilon(1), epsilon(2)) of the complex dielectric function spectra of thin film solar cell components. These spectra can then be utilized to analyze the structure of complete thin film solar cells. Optical and structural/compositional models of complete solar cells developed through least squares regression analysis of the SE data acquired for the complete cells enable simulations of external quantum efficiency (EQE) without the need for variable parameters. Such simulations can be compared directly with EQE measurements. From these comparisons, it becomes possible to understand in detail the origins of optical and electronic gains and losses in thin film photovoltaics (PV) technologies and, as a result, the underlying performance limitations. In fact, optical losses that occur when above-bandgap photons are not absorbed in the active layers can be distinguished from electronic losses when electron-hole pairs generated in the active layers are not collected. This overall methodology has been applied to copper indium-gallium diselenide (CuIn1-xGaxSe2; CIGS) solar cells, a key commercialized thin film PV technology. CIGS solar cells with both standard thickness (>2 mu m) and thin (