Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
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DOI：
10.7567/jjap.57.06hd05
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发表时间：
2018-05
影响因子：
1.5
通讯作者：
A. Ohta;Y. Kato;M. Ikeda;K. Makihara;S. Miyazaki
中科院分区：
文献类型：
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作者：
A. Ohta;Y. Kato;M. Ikeda;K. Makihara;S. Miyazaki
研究了电子束蒸发富硅氧化物（SiOx）在恒压恒流条件下夹在镍电极之间的阻变特性。此外，研究了嵌入SiOx中的Ti纳米点（ND）对电阻切换行为的影响，因为预期ND可以触发SiOx中导电细丝路径的形成。SiOx的阻变行为表明，电阻开关过程中的响应时间随着施加的恒定电流或恒定电压的增加而减小。发现SiOx中的Ti-ND由于Ti-ND的电场集中而增强导电细丝路径的形成。
We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiOx) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiOx on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiOx. The resistive switching behaviors of SiOx show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiOx enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.