Unipolar spin diodes and transistors
Unipolar spin diodes and transistors
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DOI：
10.1063/1.1348317
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发表时间：
2001-02-26
影响因子：
4
通讯作者：
Vignale, G
中科院分区：
文献类型：
--
作者：
Flatté, ME;Vignale, G
单极性器件构造的铁磁半导体材料与可变磁化方向的理论表现非常相似的双极器件，如p-n二极管和双极（结）晶体管。这样的器件可以适用于磁性感测、非易失性存储器和可重编程逻辑。(C)2001年美国物理学会。
Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic. (C) 2001 American Institute of Physics.