Towards Si1-xGex quantum-well resonant-state terahertz laser
Towards Si1-xGex quantum-well resonant-state terahertz laser
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DOI：
10.1063/1.1423771
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发表时间：
2001-12-10
影响因子：
4
通讯作者：
Yassievich, IN
中科院分区：
文献类型：
--
作者：
Altukhov, IV;Chirkova, EG;Yassievich, IN
我们报告的实验证据太赫兹（THz）激光的硼掺杂应变Si 1-xGex量子阱结构。在平行于界面施加的强电场（300-1500 V/cm）下产生激光。太赫兹受激发射的光谱显示近100妈妈的激射波长和谐振器引起的模式结构。粒子数反转的机制是基于应变SiGe层中共振受主态的形成。(C)2001年美国物理学会。
We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1-xGex quantum-well structures. The lasing arises under strong electric fields (300-1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 mum and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer. (C) 2001 American Institute of Physics.