Subpicosecond hot luminescence in III-V compounds
Subpicosecond hot luminescence in III-V compounds
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III-V 化合物中的亚皮秒热发光
DOI：
10.1109/3.159554
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发表时间：
1992
影响因子：
2.5
通讯作者：
H. Kurz
中科院分区：
文献类型：
--
作者：
R. Scholz;A. Stahl;Xianghua Zhou;K. Leo;H. Kurz
热载流子在III-V族化合物的光学响应的密度矩阵形式主义内建模。作为计算发光的起点，必须使用四点电子-空穴密度矩阵。的能带结构是由一个现实的模型，包括所有的空穴子带和伽玛，L，和X导带谷。该理论与最近的时间分辨和光谱分辨的发光上转换结果进行了详细的比较。即使用一个相当简单的指数弛豫近似计算内部热化电子和空穴的能量分布，也能得到令人满意的结果。有人认为，检测到的发光强度必须从光子产生率区分。>
The optical response of hot carriers in III-V compounds is modeled within a density matrix formalism. As a starting point for the calculation of the luminescence, a four-point electron-hole density matrix has to be used. The band structure is described by a realistic model including all hole subbands and Gamma , L, and X valleys of the conduction band. The theory is compared in detail with recent time-resolved and spectrally resolved luminescence up-conversion results. Satisfactory agreement can be obtained even with a rather simple exponential relaxation ansatz for the energies of internally thermalized electron and hole distributions. It is argued that the detected luminescence intensity must be distinguished from the photon generation rate. >