Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2
Use of metal–oxide–semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2
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DOI：
10.1063/1.1380240
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发表时间：
2001-06
影响因子：
4
通讯作者：
V. Misra;G. Heuss;H. Zhong
中科院分区：
文献类型：
--
作者：
V. Misra;G. Heuss;H. Zhong
采用金属氧化物-半导体电容器研究了Hf和Zr栅极在SiO2、ZrSixOy和ZrO2上的相互作用。当退火温度低至400℃时，观察到Hf和Zr电极的SiO2等效氧化物厚度大幅减少，同时泄漏电流增加。从电容电压测量中观察到的电厚度的减小归因于(a) SiO2的物理变薄和(b)高k层的形成。在ZrSixOy和ZrO2介质上也观察到Zr和Hf电极的严重不稳定性。Zr和Hf栅极的这种行为归因于氧化形成的高负焓和高氧溶解度，导致栅极电介质和随后的氧扩散到栅极电极的减少。
Metal–oxide–semiconductor capacitors were used to study the interaction of Hf and Zr gate electrodes on SiO2, ZrSixOy, and ZrO2. A large reduction in the SiO2 equivalent oxide thickness accompanied by an increase in the leakage current was observed with Hf and Zr electrodes when subjected to anneal temperatures as low as 400 °C. The reduction in electrical thickness as observed from the capacitance–voltage measurements was attributed to the combination of (a) physical thinning of the SiO2 and (b) formation of a high-K layer. A severe instability of Zr and Hf electrodes was also observed on ZrSixOy and ZrO2 dielectrics. This behavior of Zr and Hf gates was attributed to high negative enthalpy of oxide formation and high oxygen solubility resulting in the reduction of the gate dielectric and subsequent oxygen diffusion to the gate electrode.