Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN
Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN
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DOI：
10.1109/led.2008.2005433
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发表时间：
2008-09
影响因子：
4.9
通讯作者：
S. Sridharan;P. Yoder
中科院分区：
文献类型：
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作者：
S. Sridharan;P. Yoder
纤锌矿c轴GaN中瞬态电子速度过冲的理论计算表明，在基面（Gamma-M和Gamma-K）中的传输比沿沿着生长方向（Gamma-A）的传输具有更高的瞬态过冲峰值。瞬态过冲峰值的特征上升时间被发现是较短的运输沿着c轴。定态电子速度对于在基面中取向的输运比沿着c轴取向的输运明显更大。没有观察到显着的各向异性，但是，无论是瞬态或稳态电子速度作为一个函数的基础平面本身内的场取向。基面中较高的峰值瞬态和稳态速度直接归因于电子色散的各向异性，其沿Gamma-M和Gamma-K方向表现出较低的有效质量沿着，而沿Gamma-A方向表现出较大的非抛物线性沿着。
The theoretical calculation of transient electron velocity overshoot in wurtzite c-axis GaN indicates a higher transient overshoot peak for transport in the basal plane ( Gamma-M and Gamma-K) than along the growth direction (Gamma-A). Characteristic rise times for the transient overshoot peak are found to be shorter for transport along the c-axis. Stationary electron velocity is significantly larger for transport oriented in the basal plane than along the c -axis. No significant anisotropy is observed, however, in either the transient or steady-state electron velocity as a function of field orientation within the basal plane itself. The higher peak transient and stationary velocities in the basal plane are directly attributable to the anisotropy of the electronic dispersion, which exhibits lower effective mass along the Gamma-M and Gamma-K directions and greater nonparabolicity along the Gamma-A direction.