Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr 3
Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr 3
复制标题
外延 CsSnBr 3 中的相干跳跃传输和巨负磁阻
DOI：
10.1021/acsaelm.1c00409
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发表时间：
2021
影响因子：
4.7
通讯作者：
Pollanen, Johannes
中科院分区：
文献类型：
--
作者：
Zhang, Liangji;King, Isaac;Nasyedkin, Kostyantyn;Chen, Pei;Skinner, Brian;Lunt, Richard R.;Pollanen, Johannes
单晶无机卤化物钙钛矿材料在量子器件中的应用引起了人们的兴趣。本文介绍了外延单晶CsSnBr3薄膜器件的低温量子磁输运测量，该薄膜器件表现出二维Mott变程跳跃(VRH)和巨负磁阻。这些发现由不同定向跳跃路径之间的量子干涉模型来描述，我们得到了载流子随温度变化的跳跃长度、局域化长度以及它们在低温下的相位相干长度下限为∼100 nm。这些观察结果表明，外延卤化物钙钛矿型器件正在成为低维量子相干传输器件的一种材料类别。
Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr3, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ∼100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.