Skutterudite Thermoelectric Modules with High Volume-Power Density: Scalability and Reproducibility
Skutterudite Thermoelectric Modules with High Volume-Power Density: Scalability and Reproducibility
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DOI：
10.1021/acsaem.8b01548
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发表时间：
2018-11-01
影响因子：
6.4
通讯作者：
Powell, Anthony V.
中科院分区：
文献类型：
--
作者：
Prado-Gonjal, Jesus;Phillips, Matthew;Powell, Anthony V.
描述了具有高体积功率密度的全方钴矿热电模块的构造和评估。此类模块以最少的材料使用提供最大的功率输出。使用可扩展的球磨路线合成了 n 型未填充方钴矿 CoS132.75Sno.osTe0.20 和 p 型填充方钴矿 Ce0.5Ybo.sFe325Co0.75Sb12，为 12 个模块的构建和性能评估提供了充足的材料。室温下的阻抗谱可以提供一种快速评估模块制造质量的方法。结果显示，12 个模块的模块性能具有高度可重复性，平均内阻为 102(4) mat。对 n 型和 p 型材料的电气测量表明，室温下的功率因数 (S2 I p) 分别为 1.92 和 1.33 mW m(-1) K-2，在 673 K 和 823 K 时的最大品质因数分别为 ZT = 1.13（n 型）和 ZT = 0.91（p 型）。该模块在室温 (ZT = 0.12) 下的品质因数降低了约 10%。由于与模块架构相关的热接触电阻和电接触电阻损耗，相同温度下 n 型和 p 型元件材料的平均值比 n 型和 p 型元件材料低 39%。针对 AT 在 50-450 K 范围内确定的模块 I V 曲线显示开路电压对 AT 几乎呈线性依赖性，并允许计算功率输出，在 AT = 448 K 时达到最大值 1.8 W (0.9 W cm(-2))。
The construction and evaluation of wholly skutterudite thermoelectric modules with a high volume-power-density is described. Such modules afford the maximum power output for the minimum use of material. Synthesis of the component n type unfilled skutterudite CoS132.75Sno.osTe0.20 and p-type filled skutterudite Ce0.5Ybo.sFe325Co0.75Sb12 was achieved using a scalable ball-milling route that provides sufficient material for the construction and assessment of performance of 12 modules. Impedance spectroscopy at room temperature is shown to provide a rapid means of evaluating the quality of module fabrication. The results show a high degree of reproducibility in module performance across the 12 modules, with an average internal resistance of 102(4) mat. Electrical measurements on the component n- and p-type materials reveal power factors (S2 I p) of 1.92 and 1.33 mW m(-1) K-2, respectively, at room temperature and maximum figures of merit of ZT = 1.13 (n-type) and ZT = 0.91 (p-type) at 673 and 823 K, respectively. The figure of merit of the module at room temperature (ZT = 0.12) is reduced by ca. 39% from the average of the n- and p-type component materials at the same temperature, as a result of thermal- and electrical-contact resistance losses associated with the architecture of the module. I V curves for the module determined for AT in the range 50-450 K show an almost linear dependence of the open-circuit voltage on AT and allow calculation of the power output, which reaches a maximum value of 1.8 W (0.9 W cm(-2)) at AT = 448 K.