Cross-Sectional Atomic Force Microscopy of Semiconductor Nanostructures
Cross-Sectional Atomic Force Microscopy of Semiconductor Nanostructures
复制标题
半导体纳米结构的横截面原子力显微镜
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
E. Kapon
中科院分区：
文献类型：
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作者：
B. Dwir;F. Reinhardt;E. Kapon
我们进行了成像的半导体纳米结构（量子威尔斯和量子线）的原子力显微镜下的样品的解理边缘在环境条件下。选择性蚀刻被用来提高半导体异质结构层的成分对比度，并从扫描图像检索的纳米结构尺寸的程序。简单的样品制备和相对较大的成像面积（高达100×100 μm2）提供了比更传统的纳米分辨率技术，如透射电子显微镜的优势。
We performed imaging of semiconductor nanostructures (quantum wells and quantum wires) by atomic force microscopy of the cleaved edge of the samples under ambient conditions. Selective etching was used to enhance the composition contrast of the semiconductor heterostructure layers, and a procedure for retrieving the nanostructure dimensions from the scanned image is presented. The simple sample preparation and the relatively large (up to ∼100×100 μm2) imaged areas offer advantages over more conventional nanometer resolution techniques such as transmission electron microscopy.