High temperature surface degradation of III–V nitrides
High temperature surface degradation of III–V nitrides
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DOI：
10.1116/1.588792
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发表时间：
1996-11
影响因子：
1.4
通讯作者：
C. Vartuli;S. Pearton;C. Abernathy;J. MacKenzie;E. Lambers;J. Zolper
中科院分区：
文献类型：
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作者：
C. Vartuli;S. Pearton;C. Abernathy;J. MacKenzie;E. Lambers;J. Zolper
在高达1150°C的快速热退火温度下，研究了AlN、GaN、InN、InGaN和InAlN的表面化学计量学、表面形貌和电导率。随着退火的进行，AlN的片电阻逐渐下降，但表面只有在1000℃以上才有粗化的迹象。俄歇电子能谱（AES）分析表明，即使在1150°C时，表面化学计量也几乎没有变化。GaN表面粗糙度均方根（rms）在退火过程中总体上有所改善，但在1000℃时表面出现点蚀，此时片材电阻也下降了几个数量级，AES证实了表面N的损失。即使在650°C下，InN表面也有相当大的粗糙化，扫描电镜显示明显的降解。与二元氮化物相比，在800°C退火后，InAlN的片电阻比生长值（3.2×10−3 Ω cm）增加了~ 102，然后在1000°C时保持不变，而I…
The surface stoichiometry, surface morphology, and electrical conductivity of AlN, GaN, InN, InGaN, and InAlN were examined at rapid thermal annealing temperatures up to 1150 °C. The sheet resistance of the AlN dropped steadily with annealing, but the surface showed signs of roughening only above 1000 °C. Auger electron spectroscopy (AES) analysis showed little change in the surface stoichiometry even at 1150 °C. GaN root mean square (rms) surface roughness showed an overall improvement with annealing, but the surface became pitted at 1000 °C, at which point the sheet resistance also dropped by several orders of magnitude, and AES confirmed a loss of N from the surface. The InN surface had roughened considerably even at 650 °C, and scanning electron microscopy showed significant degradation. In contrast to the binary nitrides, the sheet resistance of InAlN was found to increase by ∼102 from the as grown value (3.2×10−3 Ω cm) after annealing at 800 °C and then remain constant up to 1000 °C, while that of I...