Correlated Metal SrVO3 Based All-Solid-State Redox Transistors Achieved by Li+ or H+ Transport
Correlated Metal SrVO3 Based All-Solid-State Redox Transistors Achieved by Li+ or H+ Transport
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DOI：
10.7566/jpsj.87.034802
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发表时间：
2018-02
影响因子：
1.7
通讯作者：
M. Takayanagi;T. Tsuchiya;W. Namiki;T. Higuchi;K. Terabe
中科院分区：
文献类型：
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作者：
M. Takayanagi;T. Tsuchiya;W. Namiki;T. Higuchi;K. Terabe
两个SrVO3（SVO）为基础的全固态氧化还原晶体管的制造，一个与Li4SiO4（LSO）Li+离子导体和Y稳定的ZrO 2（YSZ）H+离子导体。这两种器件显示出不同的电子传导特性，这与由于单价阳离子插入而具有类似电子载流子掺杂行为的预期相反。虽然YSZ器件显示出相对较大的漏极电流增强（9%），但LSO器件显示的漏极电流增强非常小（0.2%）。在这两种设备中，导电特性伴随着相当大的滞后，由于非稳态离子扩散的SVO薄膜。此外，栅极电流值比双电层晶体管（EDLT）中存在的大得多，表明这些是氧化还原晶体管而不是EDLT。
Two SrVO3 (SVO)-based all-solid-state redox transistors were fabricated; one with a Li4SiO4 (LSO) Li+ ion conductor and one with Y-stabilized-ZrO2 (YSZ) H+ ion conductor. The two devices showed different electronic conduction characteristic that were in contrast to that expected with similar electronic carrier doping behavior due to monovalent cation insertion. While the YSZ device showed a relatively large drain current enhancement (9%), that shown by the LSO device was very small (0.2%). In both devices, the electrical conduction characteristic was accompanied by considerable hysteresis due to non-steady state ionic diffusion in the SVO thin film. Furthermore, the gate current value was much larger than present in electric-double-layer-transistors (EDLT), indicating that these are redox transistors rather than EDLT.