Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy
Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy
复制标题
通过光致发光和光量热光谱研究掺铕 GaN 的红光发射
DOI：
10.1143/jjap.38.l1306
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
K. Akimoto
中科院分区：
文献类型：
--
作者：
T. Maruyama;H. Sasaki;S. Morishima;K. Akimoto
气态源分子束外延生长的掺Eu GaN薄膜具有明亮而锐利的光致发光。结果表明，与InGaN的红光发射相比，InGaN在80~300K温度范围内的发光强度下降幅度较小。在相同的温度范围内，掺Eu的GaN的红光发射在1.6 meV范围内也只有很小的峰值漂移。从这些结果可以看出，使用掺Eu的GaN作为一种稳定的抗温度变化的光电材料是有优势的。
Bright and sharp photoluminescence was obtained from Eu-doped GaN films grown by gas-source molecular beam epitaxy using ammonia. It was found that the decrease in luminescence intensity is small between 80 K and 300 K, compared with the red emission from InGaN. The red emission from Eu-doped GaN also showed only a small peak shift within 1.6 meV in the same temperature range. From these results, the advantage of using Eu-doped GaN as a stable optoelectronic material against temperature variation is shown.