The Development of Wide Band Gap Semiconductor device
The Development of Wide Band Gap Semiconductor device
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发表时间：
2006
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通讯作者：
Bi Ke-yun
中科院分区：
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作者：
Bi Ke-yun
介绍了宽带隙半导体器件的发展概况。AlGaN/GaN微波功率HEMT、蓝色激光二极管和紫外探测器阵列在军事电子领域尤为重要，在土木工程领域也具有良好的应用前景。讨论了WBG半导体器件的技术特点及其在相控阵雷达、电子战系统、精密控制与制导、光通信和水下探测器等方面的应用。
Some information of Wide Band Gap(WBG) Semiconductor device's development are introduced.AlGaN/GaN microwave power HEMT、Blue Laser diode and UV detector array are special important for military electronics and also have good application foreground for civil engineering.The technical features and some application in phase array radar,EW systems,precision control and guide as well as optical communication and detector under water of WBG Semiconductor devices are discussed.