Preparation and Thermoelectric Properties of Polycrystalline In4Sn3−x by Mechanical Alloying and Hot Pressing
Preparation and Thermoelectric Properties of Polycrystalline In4Sn3−x by Mechanical Alloying and Hot Pressing
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DOI：
10.1007/s11664-012-1948-2
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发表时间：
2012-02
影响因子：
2.1
通讯作者：
Junyou Yang;Jin Wu;Gen Li;Jiansheng Zhang;Jiangying Peng
中科院分区：
文献类型：
--
作者：
Junyou Yang;Jin Wu;Gen Li;Jiansheng Zhang;Jiangying Peng
Polycrystalline In4Se3−xthermoelectric materials were prepared by a combined process of mechanical alloying and hot pressing (MA-HP), and the effect of Se deficiency on their thermoelectric properties was studied. Starting from elemental In and Se powders, In4Se3compound was synthesized after mechanical alloying for 1 h. Single-phase In4Se3compound was obtained in the sample without Se deficiency, while some In impurity was detected in Se-deficient samples. With increasing Se deficiencyx, the carrier concentrationnincreased, and the electrical resistivity and absolute value of Seebeck coefficient of In4Se3−xdecreased rapidly. All of the In4Se3−xsamples (x> 0) had higherZTthan the stoichiometric In4Se3, with In4Se2.65showing the highestZTbecause of its low thermal conductivity. The maximumZTreached 0.93 at 700 K.
